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| SI9928DY Vishay Siliconix Complimentary 20-V (D-S) MOSFET PRODUCT SUMMARY VDS (V) N-Channel N Ch l 20 rDS(on) (W) 0.05 @ VGS = 4.5 V 0.06 @ VGS = 3.0 V 0.08 @ VGS = 2.7 V 0.11 @ VGS = -4.5 V 0.15 @ VGS = -3.0 V 0.19 @ VGS = -2.7 V ID (A) "5.0 "4.2 "3.6 "3.4 "2.9 "2.6 P-Channel P Ch l -20 20 D1 D1 S2 SO-8 S1 G1 S2 G2 1 2 3 4 Top View S1 N-Channel MOSFET D2 D2 8 7 6 5 D1 D1 D2 D2 G1 G2 P-Channel MOSFET ABSOLUTE MAXIMUM RATINGS (TA = 25_C UNLESS OTHERWISE NOTED) Parameter Drain-Source Voltage Gate-Source Voltage Continuous Drain Current (TJ = 150_C)a Pulsed Drain Current Continuous Source Current (Diode Conduction)a Maximum Power Dissipationa Operating Junction and Storage Temperature Range TA = 25_C TA = 70_C TA = 25_C TA = 70_C Symbol VDS VGS ID IDM IS PD TJ, Tstg N-Channel 20 "12 "5.0 "4.0 "10 2.0 2.0 1.3 P-Channel -20 "12 "3.4 "2.8 "10 -2.0 2.0 1.3 Unit V A W _C -55 to 150 THERMAL RESISTANCE RATINGS Parameter Maximum Junction-to-Ambienta Notes a. Surface Mounted on FR4 Board, t v 10 sec. Document Number: 70143 S-00652--Rev. G, 27-Mar-00 www.vishay.com S FaxBack 408-970-5600 Symbol RthJA N- or P-Channel 62.5 Unit _C/W 1 SI9928DY Vishay Siliconix SPECIFICATIONS (TJ = 25_C UNLESS OTHERWISE NOTED) Parameter Static Gate Threshold Voltage VGS(th) VDS = VGS, ID = 250 mA VDS = VGS, ID = -250 mA VDS = 0 V, VGS = "12 V VDS = 16 V, VGS = 0 V Zero Gate Voltage Drain Current Z G Vl DiC IDSS VDS = - 16 V, VGS = 0 V VDS = 10 V, VGS = 0 V, TJ = 70_C VDS = -10 V, VGS = 0 V, TJ = 70_C On-State Drain Currentb ID(on) VDS w 5 V, VGS = 4.5 V VDS v -5 V, VGS = -4.5 V VGS = 4.5 V, ID = 5.0 A VGS = -4.5 V, ID = -3.2 A OS Ri Drain-Source On-State Resistanceb DiS rDS(on) VGS = 3.0 V, ID = 3.9 A VGS = -3.0 V, ID = -2.0 A VGS = 2.7 V, ID = 1.0 A VGS = -2.7 V, ID = -1.0 A Forward Transconductanceb gfs VDS = 10 V, ID = 5.0 A VDS = -9 V, ID = -3.2 A IS = 5.0 A, VGS = 0 V IS = -2.0 A, VGS = 0 V N-Ch P-Ch N-Ch P-Ch N-Ch P-Ch N-Ch P-Ch N-Ch P-Ch N-Ch P-Ch N-Ch P-Ch N-Ch P-Ch N-Ch P-Ch N-Ch P-Ch 10 A -10 0.041 0.087 0.052 0.120 0.060 0.135 13 S 8 0.9 -0.9 1.2 V -1.2 0.05 0.11 0.06 0.15 0.08 0.19 W 0.8 -0.8 1.2 V -1.1 "100 "100 1 -1 5 -5 mA A nA Symbol Test Condition Min Typa Max Unit Gate-Body Leakage IGSS Diode Forward Voltageb VSD Dynamica N-Ch Total Gate Charge Qg N-Channel N Ch l VDS = 6 V, VGS = 4.5 V, ID = 5.0 A V 45V 50 P-Channel VDS = -6 V, VGS = -4.5 V, ID = -3.2 A P-Ch N-Ch P-Ch N-Ch Gate-Drain Charge Qgd P-Ch N-Ch Turn-On Delay Time td(on) N-Channel N Ch l VDD = 6 V, RL = 6 W ID ^ 1 A, VGEN = 4.5 V, RG = 6 W A 45V P-Channel VDD = -6 V, RL = 6 W ID ^ -1 A VGEN = -4 5 V, RG = 6 W A, -4.5 V P-Ch N-Ch P-Ch N-Ch P-Ch N-Ch Fall Time tf IF = 5.0 A, di/dt = 100 A/ms IF = -2.0 A, di/dt = 100 A/ms P-Ch N-Ch P-Ch 10 8 2.6 nC C 1.6 3.7 3.5 13 22 9 43 30 35 9 20 100 75 30 40 40 80 60 ns 70 30 40 150 100 20 20 Gate-Source Charge Qgs Rise Time tr Turn-Off Delay Time td(off) Source-Drain Reverse Recovery Time trr Notes a. For design aid only; not subject to production testing. b. Pulse test; pulse width v 300 ms, duty cycle v 2%. www.vishay.com S FaxBack 408-970-5600 2 Document Number: 70143 S-00652--Rev. G, 27-Mar-00 SI9928DY Vishay Siliconix TYPICAL CHARACTERISTICS (25_C UNLESS NOTED) Output Characteristics 20 VGS = 5.5, 5, 4.5, 4, 3.5 V 16 I D - Drain Current (A) 3V I D - Drain Current (A) 16 20 N CHANNEL Transfer Characteristics 12 12 8 2.5 V 8 TC = 125_C 4 4 2V 1.5 V 0 0 1 2 3 4 5 25_C -55_C 0 0 0.5 1.0 1.5 2.0 2.5 3.0 3.5 4.0 VDS - Drain-to-Source Voltage (V) VGS - Gate-to-Source Voltage (V) On-Resistance vs. Drain Current 0.10 2000 Capacitance r DS(on) - On-Resistance ( ) 0.08 VGS = 2.7 V VGS = 3 V C - Capacitance (pF) 1600 0.06 VGS = 4.5 V 0.04 1200 800 Ciss 400 Crss Coss 0.02 0 0 4 8 12 16 20 0 0 2 4 6 8 10 12 ID - Drain Current (A) VDS - Drain-to-Source Voltage (V) Gate Charge 7 6 5 4 3 2 1 0 0 3 6 9 12 15 0 -50 VDS = 6 V ID = 5 A 2.0 On-Resistance vs. Junction Temperature V GS - Gate-to-Source Voltage (V) r DS(on) - On-Resistance ( ) (Normalized) 1.6 VGS = 4.5 V ID = 5 A 1.2 0.8 0.4 0 50 100 150 Qg - Total Gate Charge (nC) Document Number: 70143 S-00652--Rev. G, 27-Mar-00 TJ - Junction Temperature (_C) www.vishay.com S FaxBack 408-970-5600 3 SI9928DY Vishay Siliconix TYPICAL CHARACTERISTICS (25_C UNLESS NOTED) Source-Drain Diode Forward Voltage 20 TJ = 150_C I S - Source Current (A) 10 TJ = 25_C r DS(on) - On-Resistance ( ) 0.200 ID = 5 A 0.150 0.250 ID = 1 A N CHANNEL On-Resistance vs. Gate-to-Source Voltage 0.100 0.050 1 0 0.4 0.8 1.2 1.6 2.0 0 0 1 2 3 4 5 6 VSD - Source-to-Drain Voltage (V) VGS - Gate-to-Source Voltage (V) Threshold Voltage 1.0 25 Single Pulse Power 0.5 V GS(th) Variance (V) ID = 250 A 20 0.0 Power (W) 15 10 -0.5 5 -1 -50 0 0 50 TJ - Temperature (_C) 100 150 0.01 0.1 1 Time (sec) 10 100 Normalized Thermal Transient Impedance, Junction-to-Ambient 2 1 Duty Cycle = 0.5 Normalized Effective Transient Thermal Impedance 0.2 Notes: 0.1 0.1 0.05 PDM t1 t2 1. Duty Cycle, D = t1 t2 2. Per Unit Base = RthJA = 62.5_C/W 3. TJM - TA = PDMZthJA(t) 0.02 Single Pulse 0.01 10-4 10-3 10-2 10-1 1 4. Surface Mounted 10 30 Square Wave Pulse Duration (sec) www.vishay.com S FaxBack 408-970-5600 4 Document Number: 70143 S-00652--Rev. G, 27-Mar-00 SI9928DY Vishay Siliconix TYPICAL CHARACTERISTICS (25_C UNLESS NOTED) Output Characteristics 10 VGS = 5, 4 V 8 I D - Drain Current (A) 3V 8 I D - Drain Current (A) 10 P CHANNEL Transfer Characteristics 6 6 4 4 TC = 125_C 2 25_C -55_C 0 2 2, 1 V 0 0 2 4 6 8 10 0 0.5 1.0 1.5 2.0 2.5 3.0 3.5 VDS - Drain-to-Source Voltage (V) VGS - Gate-to-Source Voltage (V) On-Resistance vs. Drain Current 0.25 2000 Capacitance r DS(on) - On-Resistance ( ) 0.20 C - Capacitance (pF) VGS = 2.7 V VGS = 3 V 0.15 1500 1000 Ciss 0.10 VGS = 4.5 V 500 Crss Coss 0.05 0 1 2 3 4 5 6 0 0 2 4 6 8 10 ID - Drain Current (A) VDS - Drain-to-Source Voltage (V) 5 Gate Charge 1.6 On-Resistance vs. Junction Temperature V GS - Gate-to-Source Voltage (V) 3 r DS(on) - On-Resistance ( ) (Normalized) 4 VDS = 6 V ID = 3.2 A 1.4 VGS = 4.5 V ID = 3.2 A 1.2 2 1.0 1 0.8 0 0 2 4 6 8 10 0.6 -50 0 50 100 150 Qg - Total Gate Charge (nC) Document Number: 70143 S-00652--Rev. G, 27-Mar-00 TJ - Junction Temperature (_C) www.vishay.com S FaxBack 408-970-5600 5 SI9928DY Vishay Siliconix TYPICAL CHARACTERISTICS (25_C UNLESS NOTED) Source-Drain Diode Forward Voltage 10 TJ = 150_C TJ = 25_C r DS(on) - On-Resistance ( ) I S - Source Current (A) 0.20 P CHANNEL On-Resistance vs. Gate-to-Source Voltage 0.17 ID = 3.2 A 0.14 0.11 0.08 1 0 0.4 0.8 1.2 1.6 2.0 0.05 0 2 4 6 8 VSD - Source-to-Drain Voltage (V) VGS - Gate-to-Source Voltage (V) Threshold Voltage 1.0 25 Single Pulse Power 0.5 V GS(th) Variance (V) ID = 250 A 20 0.0 Power (W) 15 10 -0.5 5 -1 -50 0 0 50 TJ - Temperature (_C) 100 150 10-2 10-1 1 Time (sec) 10 30 Normalized Thermal Transient Impedance, Junction-to-Ambient 2 1 Duty Cycle = 0.5 Normalized Effective Transient Thermal Impedance 0.2 Notes: 0.1 0.1 0.05 0.02 PDM t1 t2 1. Duty Cycle, D = t1 t2 2. Per Unit Base = RthJA = 62.5_C/W 3. TJM - TA = PDMZthJA(t) Single Pulse 0.01 10-4 10-3 10-2 10-1 1 4. Surface Mounted 10 30 Square Wave Pulse Duration (sec) www.vishay.com S FaxBack 408-970-5600 6 Document Number: 70143 S-00652--Rev. G, 27-Mar-00 |
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